Title :
Improved continuous model for short channel double-gate junctionless transistors
Author :
Cardoso Paz, Bruna ; Avila, Fernand ; Cerdeira, Antonio ; Pavanello, Marcelo Antonio
Author_Institution :
Dept. of Electr. Eng., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This work aims to present an evolution of a continuous model for short channel double-gate junctionless transistors, where the saturation velocity is included and model validation is spread to different doping concentrations, channel widths and shorter channel lengths. A long channel charge-based model for double-gate devices is used as a basis for the development of this model. To consider the short channel effects, the proposed model accounts for the influence of the drain bias in the channel potential, the reduction of the effective channel length in saturation regime and the saturation velocity effect for short channel transistors. Three dimensional numerical simulations will be used to validate the model.
Keywords :
numerical analysis; semiconductor doping; transistors; channel charge-based model; channel lengths; channel widths; continuous model improvement; doping concentrations; double-gate devices; drain bias; saturation velocity; short channel double-gate junctionless transistors; three dimensional numerical simulations; validation model; junctionless; model; short channel;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940100