DocumentCode
136236
Title
Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors
Author
Doria, R.T. ; Trevisoli, R. ; de Souza, M. ; Pavanello, Marcelo Antonio
Author_Institution
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
fYear
2014
fDate
1-5 Sept. 2014
Firstpage
1
Lastpage
4
Abstract
This paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.
Keywords
MOSFET; nanoelectronics; semiconductor doping; silicon-on-insulator; bulk silicon mobility; channel widths; doping concentrations; effective mobility analysis; n-type SOI junctionless nanowire transistors; p-type SOI junctionless nanowire transistors; size 20 nm; trigate junctionless nanowire transistors; Logic gates; Nanoscale devices; Semiconductor device modeling; Tin; Voltage measurement; Effective Mobility; Junctionless Transistors; Silicon-on-Insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location
Aracaju
Type
conf
DOI
10.1109/SBMicro.2014.6940108
Filename
6940108
Link To Document