Title :
Dark current noise and noise gain in quantum-well infrared photodetectors
Author :
Maia, A.D.B. ; Figueroa, B.P. ; Bezerra, A.T. ; Kawabata, R.M.S. ; Pires, M.P. ; Souza, P.L.
Author_Institution :
DISSE-Inst. Nac. de Cienc. e Tecnol. de Nanodispositivos Semicondutores, Brazil
Abstract :
Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor device noise; semiconductor quantum wells; InGaAs-InAlAs; InGaAs-InAlAs quantum well infrared photodetectors; bias voltage; current noise dependence; dark current noise; noise gain; Indium gallium arsenide; Noise; Temperature dependence; InGaAs/InAlAs; noise; photodetector; quantum wells;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940112
