• DocumentCode
    136240
  • Title

    Dark current noise and noise gain in quantum-well infrared photodetectors

  • Author

    Maia, A.D.B. ; Figueroa, B.P. ; Bezerra, A.T. ; Kawabata, R.M.S. ; Pires, M.P. ; Souza, P.L.

  • Author_Institution
    DISSE-Inst. Nac. de Cienc. e Tecnol. de Nanodispositivos Semicondutores, Brazil
  • fYear
    2014
  • fDate
    1-5 Sept. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.
  • Keywords
    III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor device noise; semiconductor quantum wells; InGaAs-InAlAs; InGaAs-InAlAs quantum well infrared photodetectors; bias voltage; current noise dependence; dark current noise; noise gain; Indium gallium arsenide; Noise; Temperature dependence; InGaAs/InAlAs; noise; photodetector; quantum wells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
  • Conference_Location
    Aracaju
  • Type

    conf

  • DOI
    10.1109/SBMicro.2014.6940112
  • Filename
    6940112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=136240