Title :
CMOS Active-Pixel Sensor in low temperature
Author :
do Rosario, Pedro V. F. ; Salles, Luciana P. ; de Mello, Artur S. B. ; de Lima Monteiro, Davies W.
Author_Institution :
Dept. of Electr. Eng., Univ. Fed. de Minas Gerais, Belo Horizonte, Brazil
Abstract :
This paper presents experimental and simulated results of an Active-Pixel Sensor (APS) circuit operating at different temperatures (300K, 77K, 60K and 40K). The optical sensor used was a silicon photodiode integrated with its electronics in a standard CMOS 0.35μm technology. Interestingly, the pixel worked well at all temperatures tested. These first experimental results are very promising for future hybridization between APS circuits and infrared quantum sensors, mostly on III-V semiconductor substrates, or other applications demanding low temperatures.
Keywords :
CMOS image sensors; cryogenic electronics; infrared detectors; integrated optoelectronics; optical sensors; APS circuit; CMOS active-pixel sensor circuit; CMOS technology; III-V semiconductor substrates; infrared quantum sensors; low temperatures; optical sensor; silicon photodiode; size 0.35 mum; temperature 300 K; temperature 40 K; temperature 60 K; temperature 77 K; Capacitance; Integrated optics; Optical imaging; Optical sensors; Physics; Temperature sensors; Tin; Active Pixel Sensor; CMOS analog integrated circuits; cryogenic circuits; integrated optoelectronics; low temperature; optical sensor; photodiode;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940114
