Title :
Effect of Ag or Cu doping on erasable phase-change Sb-Te thin films
Author :
Chen, Yi-Mmg ; Kuo, P.C.
Author_Institution :
Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/1/1998 12:00:00 AM
Abstract :
The crystallization process of the Ag or Cu doped Sb2Te 3 amorphous film was investigated by isothermal treatment for one hour at 100°C, 200°C and 300°C respectively. The crystallization temperatures of Ag8.3Sb34.9Te56.8 and Cu8.4Sb35.1Te56.5 films determined by DSC analysis were more than 125°C and 120°C respectively, while that of the undoped Sb2Te3 film was 97°C. It indicates that doping Ag or Cu can improve the room temperature stability of Sb2Te3 amorphous films. For pure and some Ag, Cu doped Sb2Te3 films, phase transformations from lower temperature metastable phases to higher temperature thermodynamic stable phases were found. This kind of phase transformation would cause the appearance of ambiguous exothermic peak in DSC curve. When the Ag content is increased to about 6.6 at%, the melting temperature of the film is enhanced from 415°C for undoped film to higher than 450°C. For the Cu doped film, same tendency can be achieved as Cu content is increased to 8.4 at%. The contrast ratios between as-deposited and 300°C annealed films of Ag3.2Sb 35.8Te61.0 and Cu41Sb37.4Te 58.5 films were more than 42% and 37% respectively
Keywords :
annealing; antimony compounds; copper; crystallisation; melting point; optical films; optical storage; silver; thermal analysis; thermal stability; 100 to 300 C; DSC; Sb2Te3 amorphous thin film; Sb2Te3:Ag; Sb2Te3:Cu; annealing; contrast ratio; crystallization temperature; doping; erasable phase-change optical data storage; isothermal treatment; melting temperature; metastable phase; phase transformation; thermodynamic stability; Amorphous materials; Crystallization; Doping; Isothermal processes; Metastasis; Stability; Tellurium; Temperature; Thermodynamics; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on