Title :
Improving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications
Author :
Navarenho de Souza, Rafael ; Guazzelli da Silveira, Marcilei A. ; Pinillos Gimenez, Salvador
Author_Institution :
Dept. of Electr. Eng., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This paper describes an experimental comparative study of the total ionizing dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layouts (CnM). Because of the special characteristic of the bird´s beaks regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to increase the devices TID hardness for analog integrated circuits (IC) applications in terms of the unity voltage gain frequency (fT) without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.
Keywords :
MOSFET; analogue integrated circuits; radiation hardening (electronics); CMOS manufacturing process; CnM; MOSFETs radiation robustness; S gate geometry; WnM; analog ICs; analog integrated circuits; bird beaks regions; complementary MOS manufacturing process; device TID hardness; metal-oxide-semiconductor field effect transistors; standard layouts; total ionizing dose effect; unity voltage gain frequency; wave MOSFET; wave layout; CMOS integrated circuits; CMOS technology; Discharges (electric); Layout; Logic gates; Proposals; Random access memory; TID; Wave layout; analog circuits; radiation hardness by design; total ionizing dose; unit voltage gain frequency;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940117
