DocumentCode
1362455
Title
A highly reliable GaInAs-GaInP 0.98-/spl mu/m window laser
Author
Hashimoto, Jun-ichi ; Ikoma, Nobuyuki ; Murata, Michio ; Katsuyama, Tsukuru
Author_Institution
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Volume
36
Issue
8
fYear
2000
Firstpage
971
Lastpage
977
Abstract
A novel window structure realized by selective N ion implantation and subsequent rapid thermal annealing has been applied to overcome the catastrophic optical damage (COD) of a GaInAs-GaInP laser emitting in the 0.98-/spl mu/m wavelength region. A kink-free output power up to 220 mW at 25/spl deg/C was obtained. Laser characteristics including the I-L, far-field pattern, and lasing spectrum were almost the same as those of a conventional nonwindow laser consisting of the same structure except for the window region. In a 50/spl deg/C, APC-150 mW aging test, the window lasers have operated stably beyond 16 000 h, and no damage has been observed. Under this aging condition, a median lifetime of 280 000 h was obtained from log-normal plotting of aging characteristics. This marked improvement in reliability is due to a remarkable increase of damage tolerance realized by the window structure. In addition, there was minimal change in the characteristic of the window laser during the aging, indicating the absence of serious inner degradation. These results clearly show that our 0.98-/spl mu/m window laser suppresses both COD failure and inner degradation satisfactorily and can be used in practical applications.
Keywords
III-V semiconductors; ageing; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser beams; laser reliability; quantum well lasers; rapid thermal annealing; semiconductor device reliability; 0.98 mum; 150 mW; 16000 h; 220 mW; 25 C; 280000 h; 50 C; GaInAs-GaInP; GaInAs-GaInP laser; I-L pattern; aging; aging characteristics; aging condition; aging test; catastrophic optical damage; conventional nonwindow laser; damage tolerance; far-field pattern; highly reliable laser; inner degradation; kink-free output power; laser characteristics; lasing spectrum; log-normal plotting; median lifetime; practical applications; rapid thermal annealing; reliability; selective N ion implantation; window laser; window lasers; window region; window structure; Aging; Degradation; Ion implantation; Laser stability; Laser transitions; Particle beam optics; Power generation; Rapid thermal annealing; Stimulated emission; Testing;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.853558
Filename
853558
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