Title :
Thin titanium oxide films obtained by RTP and by sputtering
Author :
Cesar, R.R. ; Barros, A.D. ; Doi, I. ; Diniz, Jose A. ; Swart, J.W.
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Campinas - UNICAMP, Campinas, Brazil
Abstract :
In this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.
Keywords :
crystal structure; high-k dielectric thin films; oxidation; permittivity; rapid thermal processing; sputter deposition; thin films; titanium compounds; RTP; TiO2; anatase crystal structure; capacitor fabrication; charge density; dielectric constant value; electrical characterization; flat-band voltage; high-k dielectric thin films; metallic titanium deposition; oxidation; oxygen atmosphere; rapid thermal process; reactive sputtering; rutile crystal structure; sputtering; structural characterization; thin titanium oxide films; titanium oxide thin films; Annealing; Electric variables measurement; Ellipsometry; Gases; Silicon; Sputtering; Thickness measurement; Sputtering; dielectric constant; titanium oxide;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940120
