Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Author

Mederos, M. ; Mestanza, S.N.M. ; Doi, I. ; Diniz, Jose A.

Author_Institution

Fed. Univ. of ABC (UFABC), Santo Andre, Brazil

fYear

2014

fDate

1-5 Sept. 2014

Firstpage

1

Lastpage

5

Abstract

Effects of annealing time on memory characteristics of Ge nanoparticles (NPs) as floating gate of metal-oxide-semiconductor (MOS) structure are investigated in this work. First, Ge NPs at 8.5 nm-near to Si/SiO₂ interface were obtained by Low Pressure Chemical Vapor Deposition (LPCVD). The morphology and dimension of these NPs was estimated by the statistic treatment of Atomic Force Microscopy images, which exhibited an homogeneous distribution of NPs over SiO₂, with a main diameter of (6.72±1.97) nm and NPs-density of 1.5×10¹² cm^-2. For the characterization of memory properties, high-frequency Capacitive-Voltage measurements as function of annealing time were performed on the MOS structure containing these Ge NPs. The results showed a memory window of 11.92 V with an electrical charge storage density of 6.61×10¹² cm^-2. The Current-Voltage measurement showed a Fowler-Nordheim tunneling as the conduction mechanism of our device.

Keywords

MIS structures; annealing; atomic force microscopy; chemical vapour deposition; elemental semiconductors; nanoparticles; random-access storage; silicon; silicon compounds; Fowler-Nordheim tunneling; Ge; LPCVD; MOS structures; NPs-density; Si-SiO₂; annealing time effect; atomic force microscopy images; conduction mechanism; electrical charge storage density; high-frequency capacitive-voltage measurements; low pressure chemical vapor deposition; memory behavior; memory property characterization; metal-oxide-semiconductor structure; nanoparticles; nonvolatile memory; size 8.5 nm; voltage 11.92 V; Annealing; Capacitance-voltage characteristics; Capacitors; Charge measurement; Microscopy; Silicon; Thickness measurement; Germanium; LPCVD; MOS structure; Nonvolatile memory; nanoparticles;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on

Conference_Location

Aracaju

Type

conf

DOI

10.1109/SBMicro.2014.6940123

Filename

6940123