Title :
Influence of high temperature on substrate effect of UTBB SOI nMOSFETs
Author :
Itocazu, Vitor T. ; Sonnenberg, Victor ; Simoen, Eddy ; Claeys, Cor ; Martino, Joao Antonio
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
An analysis of the temperature influence on the substrate effect of short channel Ultra Thin Body and BOX (UTBB) SOI nMOSFETs with and without Ground Plane (GP) implantation is presented. This study was done from room temperature up to 200°C. The theoretical model was applied and the results are in agreement with experimental and simulation data. The data shows a kink in the drain current as a function of back-gate voltage due to the substrate potential drop when the ground plane is not present. The ground plane reduces the substrate potential drop, but increases the potential drop over the gate and buried oxides. The maximum difference between VGB with and without GP decreases for high temperature.
Keywords :
MOSFET; ion implantation; silicon-on-insulator; GP; UTBB SOI nMOSFETs; back-gate voltage function; drain current; ground plane implantation; high temperature; short channel ultra thin body and box SOI nMOSFETs; substrate effect; substrate potential drop; Bismuth; Logic gates; MOSFET; Silicon; Substrates; Ground Plane; SOI; Threshold voltage; Ultra Thin Body and Buried Oxide; simulation; substrate effect;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940132
