Title :
Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K
Author :
Trevisoli, R. ; de Souza, M. ; Doria, R.T. ; Kilchtyska, Valeriya ; Flandre, Denis ; Pavanello, Marcelo Antonio
Author_Institution :
Electr. Enigeering Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
The aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.
Keywords :
MOSFET; nanoelectronics; MOSFETs; channel resistance; drain current; interface trap density; junctionless nanowire transistor electrical parameters; liquid helium temperature; low field mobility; subthreshold slope; temperature effect; transconductance; Helium; Logic gates; Junctionless Transistors; Liquid Helium Temperature; Low Field Mobility;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940134
