DocumentCode :
1362651
Title :
GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling
Author :
Rodwell, Mark J.W. ; Kamegawa, Masayuki ; Yu, Ruai ; Case, Michael ; Carman, Eric ; Giboney, Kirk S.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
39
Issue :
7
fYear :
1991
fDate :
7/1/1991 12:00:00 AM
Firstpage :
1194
Lastpage :
1204
Abstract :
The GaAs nonlinear transmission line (NLTL) is a monolithic millimeter-wave integrated circuit consisting of a high-impedance transmission line loaded by reverse-biased Schottky contacts. The engineering of functional monolithic NLTLs is considered. Through generation of shock waves on the NLTL, the authors have generated electrical step functions with approximately 5 V magnitude and less than 1.4 ps fall time. Diode sampling bridges strobed by NLTL shock-wave generators have attained bandwidths approaching 300 GHz and have applications in instruments for millimeter-wave waveform and network measurements. The authors discuss the circuit design and diode design requirements for picosecond NLTL shock-wave generators and NLTL-driven sampling circuits.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; transmission lines; 1.4 ps; 300 GHz; 5 V; EHF; GaAs nonlinear transmission lines; MIMIC; NLTL-driven sampling circuits; bandwidths; circuit design; diode design requirements; electrical step functions; fall time; generation of shock waves; high-impedance transmission line; millimeter-wave sampling; monolithic NLTLs; monolithic millimeter-wave integrated circuit; picosecond NLTL shock-wave generators; picosecond pulse generation; reverse-biased Schottky contacts; semiconductors; Distributed parameter circuits; Gallium arsenide; Millimeter wave integrated circuits; Millimeter wave measurements; Pulse generation; Sampling methods; Schottky barriers; Schottky diodes; Shock waves; Transmission lines;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.85387
Filename :
85387
Link To Document :
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