A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

Author

Yu, Shimeng ; Wong, H. -S Philip

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

Volume

31

Issue

12

fYear

2010

Firstpage

1455

Lastpage

1457

Abstract

The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material-dependent switching polarity and the voltage-time dilemma between fast switching and long retention.

Keywords

MIS devices; random-access storage; switching circuits; Joule heating; bipolar resistive switching mechanism; electrode-material-dependent switching polarity; electrode/oxide interface property; interfacial barrier; ion migration model; metal oxide RRAM; numerical simulation; oxygen ion migration; phenomenological model; reset mechanism; switching mode; thermal dissolution model; unipolar resistive switching mechanism; unipolar/bipolar switching behavior; voltage-time dilemma; Electrodes; Heat transfer; Ions; Numerical models; Resistance; Switches; Ion migration; Joule heating; resistive switching; switching polarity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2078794

Filename

5611571