Title :
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Author :
Yu, Shimeng ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material-dependent switching polarity and the voltage-time dilemma between fast switching and long retention.
Keywords :
MIS devices; random-access storage; switching circuits; Joule heating; bipolar resistive switching mechanism; electrode-material-dependent switching polarity; electrode/oxide interface property; interfacial barrier; ion migration model; metal oxide RRAM; numerical simulation; oxygen ion migration; phenomenological model; reset mechanism; switching mode; thermal dissolution model; unipolar resistive switching mechanism; unipolar/bipolar switching behavior; voltage-time dilemma; Electrodes; Heat transfer; Ions; Numerical models; Resistance; Switches; Ion migration; Joule heating; resistive switching; switching polarity;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2078794
