• DocumentCode
    1362800
  • Title

    A GHz Spintronic-Based RF Oscillator

  • Author

    Villard, Patrick ; Ebels, Ursula ; Houssameddine, Dimitri ; Katine, Jordan ; Mauri, Daniele ; Delaet, Bertrand ; Vincent, Pierre ; Cyrille, Marie-Claire ; Viala, Bernard ; Michel, Jean-Philippe ; Prouvée, Jérôme ; Badets, Frank

  • Author_Institution
    CEA-Leti, MINATEC, Grenoble, France
  • Volume
    45
  • Issue
    1
  • fYear
    2010
  • Firstpage
    214
  • Lastpage
    223
  • Abstract
    A nano-sized oscillator for RF applications is presented which is based on two spintronic effects, the tunneling magnetoresistance (TMR) and the spin momentum transfer torque. The oscillation frequency is several GHz and can be tuned by both a DC bias current and an external DC magnetic field. High compactness, high tunability and full compatibility with standard CMOS process make this spin torque nano-oscillator (STNO) a promising candidate for future RF transceivers. The main issues to be addressed are spectral purity and output power. First measurements on a hybrid built connecting the STNO to a dedicated wideband amplifier show that today´s performance in terms of power is close to but not yet compatible with telecommunication standard requirements. Using time domain analysis we show that frequency fluctuations are an issue for spectral purity. Frequency synthesis concepts based on STNOs are also discussed.
  • Keywords
    magnetoelectronics; magnetoresistive devices; microwave oscillators; nanoelectronics; tunnelling magnetoresistance; voltage-controlled oscillators; DC bias current; DC magnetic field; GHz spintronic-based nanosized RF oscillators; RF transceivers; TMR; VCO; compactness; complementary metal-oxide-semiconductor; frequency fluctuations; frequency synthesis; oscillation frequency tuning; output power; radiofrequency oscillators; radiofrequency transceivers; spectral purity; spin momentum transfer torque; spin torque nanooscillator; standard CMOS process compatibility; telecommunication standard requirements; time domain analysis; tunability; tunneling magnetoresistance; voltage controlled oscillators; wideband amplifier; CMOS process; Magnetic field measurement; Magnetoelectronics; Oscillators; Power amplifiers; Power generation; Radio frequency; Torque; Transceivers; Tunneling magnetoresistance; Frequency synthesis; VCO; magneto-resistance; spin torque;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2009.2034432
  • Filename
    5357553