DocumentCode
1362933
Title
The role of feedback in rewritable storage channels [Lecture Notes]
Author
Franceschini, Michele ; Lastras-Montao, L.A. ; Mittelholzer, Thomas ; Sharma, Mukesh
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
26
Issue
6
fYear
2009
fDate
11/1/2009 12:00:00 AM
Lastpage
222
Abstract
New memory technologies and the intrinsic issues associated with device scaling are making the behavior of storage systems increasingly similar to that of noisy communication channels. The ability to read and possibly rewrite content onto memory, however, makes rewritable channels fundamentally different from standard point-to-point channels from an information theoretic standpoint. In this article, we have formalized the problem of finding the storage capacity of a rewritable medium. For a simple uniformly distributed noise model, we derived upper and lower bounds on the storage capacity. An extension to data-dependent noise was also presented. These results provide further evidence of the value of rewriting not only as a pedagogical tool but also as an essential strategy in making nonvolatile memories market competitive.
Keywords
feedback; random-access storage; data-dependent noise; device scaling; distributed noise model; feedback; noisy communication channels; nonvolatile memory; rewritable storage channels; storage capacity; Amorphous materials; Conductivity; Crystalline materials; Dynamic programming; Estimation theory; Feedback; Nonvolatile memory; Phase change materials; Read-write memory; Writing;
fLanguage
English
Journal_Title
Signal Processing Magazine, IEEE
Publisher
ieee
ISSN
1053-5888
Type
jour
DOI
10.1109/MSP.2009.934184
Filename
5230819
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