DocumentCode :
1362947
Title :
Solid state: The case for CMOS: Its low power consumption and many design choices mean that by the decade´s end, half of all ICs may be made by this technique
Author :
Davies, R.D.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Volume :
20
Issue :
10
fYear :
1983
Firstpage :
26
Lastpage :
32
Abstract :
The versatility of CMOS in meeting diverse circuit-design requirements and the reduced cost of processing CMOS are examined from the viewpoint of very large-scale integration. The application of CMOS in dynamic memory is outlined, along with the tradeoffs in optimizing the processing of CMOS devices. The creation of faster CMOS circuits, improved layout density, and interconnections are also highlighted. The necessary advances expected to propel CMOS technology beyond the current level of circuits in the 4-Mb dynamic RAM and 1-b static RAM classes are examined, with particular regard to groove isolation, stacking of transistors, and silicon-on-insulator fabrication.
Keywords :
field effect integrated circuits; integrated memory circuits; large scale integration; CMOS; Si-insulator; VLSI; circuit-design; dynamic RAM; dynamic memory; field effect ICs; groove isolation; interconnections; layout density; stacking of transistors; static RAM; very large-scale integration; CMOS integrated circuits; CMOS technology; Logic gates; MOS devices; Metallization; Random access memory; Transistors;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1983.6369986
Filename :
6369986
Link To Document :
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