Title :
Submicron-gate InP power MISFET´s with improved output power density at 18 and 20 GHz
Author :
Biedenbender, Michael D. ; Kapoor, Vik J. ; Shalkhauser, Kurt A. ; Messick, Louis J. ; Nguyen, Richard ; Schmitz, Dietmar ; Jurgensen, Holger
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fDate :
8/1/1991 12:00:00 AM
Abstract :
The microwave characteristics at 18 and 20 GHz of submicron-gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications are presented. InP power MISFETs were fabricated with 0.7 μm gate lengths, 0.2 mm gate widths, and drain-source spacings of 2, 3 and 5 μm. The output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacings of 3 μm. At 18 GHz output power densities of 1.59 W/mm with a gain of 3.47 dB and a power-added efficiency of 20.0% were obtained for a drain-source spacing of 3 μm. At 20 GHz output power densities of 1.20 W/mm with a gain of 3.17 dB and a power-added efficiency of 13.6% were obtained for a drain-source spacing of 3 μm
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 0.2 mm; 0.7 to 5 micron; 13.6 to 20 percent; 18 to 20 GHz; 3.17 to 3.47 dB; InP; MISFET; SHF; drain-source spacing; field-effect transistors; microwave characteristics; output power density; power MISFETs; submicron-gate; FETs; Gain; Gallium arsenide; Indium phosphide; Insulation; MISFETs; Metal-insulator structures; Microwave devices; Millimeter wave technology; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
