Title :
Spontaneous emission in semiconductor microcavity post lasers
Author :
Bava, G.P. ; Debernardi, P.
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
fDate :
2/1/1998 12:00:00 AM
Abstract :
A complete and self-consistent model for the evaluation of spontaneous emission in microcavity semiconductor post lasers is presented. It takes into account the continuous electromagnetic field spectrum of the resonator and the carrier density dependence of all the parameters; in addition valence band mixing is included in the computation of the band structure. Both the total recombination rate due to spontaneous emission and the β factor are computed and discussed. Numerical examples are reported for λ/2 and λ cavities since both of them present interesting aspects. In particular for the second case the problem of lateral radiation is investigated
Keywords :
carrier density; laser cavity resonators; laser theory; semiconductor device models; semiconductor lasers; spontaneous emission; β factor; λ cavities; λ/2 cavities; band structure; carrier density dependence; continuous electromagnetic field spectrum; lateral radiation; self-consistent model; semiconductor microcavity post lasers; spontaneous emission; total recombination rate; valence band mixing;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19981783
