Title :
Gain partitioning: a new approach for analyzing the high-frequency performance of compound semiconductor FETs
Author :
Vickes, Hans-Olof
Author_Institution :
Dept. of Electr. Eng., Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
8/1/1991 12:00:00 AM
Abstract :
A novel approach for analyzing the high-frequency performance of compound semiconductor FETs is presented. The approach is based on a circuit description that separates intrinsic and parasitic circuit elements of active devices in a general way. Mason´s gain (U) and current gain (Ai) are used to illustrate this approach. Significant results from U are related to a more commonly used nomenclature involving maximum stable gain and maximum available gain and, in particular, to the transition from a potentially unstable device to a potentially stable device. Results show that the requirements for maximizing these cutoff frequencies are different. Minimized parasitic circuit elements maximize fτ. A maximized fmax, on the contrary, may be obtained if interactions of parasitic and intrinsic circuit elements satisfy certain conditions
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; active devices; compound semiconductor FETs; cutoff frequencies; gain partitioning; high-frequency performance; intrinsic circuit elements; maximum available gain; maximum stable gain; parasitic circuit elements; stable device; unstable device; Circuits; FETs; Frequency; Gallium arsenide; MESFETs; Millimeter wave radar; Millimeter wave technology; Performance analysis; Performance gain; Transistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on