DocumentCode :
1363003
Title :
State-space analysis of the quantum-well injection transit time diode
Author :
Conn, David R. ; Bauman, Paul D.
Author_Institution :
Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
Volume :
39
Issue :
8
fYear :
1991
fDate :
8/1/1991 12:00:00 AM
Firstpage :
1403
Lastpage :
1412
Abstract :
A state-space linear model of the quantum-well injection transit time (QWITT) diode is developed. The resulting system of equations is suitable for time- and frequency-domain analysis of the QWITT diode with its external circuit, and since the eigenvalues (complex resonant frequencies) are an integral part of the formulation, the method is extremely useful for the design of oscillator circuits and for the study of stability problems that are associated with supplying bias to the diode. The model includes the effects of velocity overshoot and carrier diffusivity as well as the physical geometry of the devices being studied. It is tested by comparing the predicted small-signal impedance with other well-known models for similar devices. Using state-space analysis, it is predicted that long diodes with a positive injection conductance will not have an input impedance with a negative real part at any frequency
Keywords :
semiconductor device models; semiconductor diodes; solid-state microwave devices; state-space methods; transit time devices; QWITT diode; carrier diffusivity; complex resonant frequencies; eigenvalues; external circuit; frequency-domain analysis; input impedance; long diodes; oscillator circuits; physical geometry; positive injection conductance; quantum-well injection transit time diode; small-signal impedance; stability problems; state-space analysis; state-space linear model; velocity overshoot; Circuit stability; Diodes; Eigenvalues and eigenfunctions; Frequency domain analysis; Impedance; Integral equations; Oscillators; Quantum wells; RLC circuits; Resonant frequency;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.85416
Filename :
85416
Link To Document :
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