Title :
Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon
Author :
Johnson, R.A. ; Chang, C.E. ; Asbeck, P.M. ; Wood, M.E. ; Garcia, G.A. ; Lagnado, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
Inductors are important elements of microwave circuits that frequently require high self-resonant frequencies and high quality factors. In this work, circular spiral inductors fabricated on silicon-on-sapphire (SOS) and bulk silicon are compared. Due to the low-loss dielectric substrate, SOS inductors showed both higher self-resonant frequencies and higher quality factors than those fabricated on bulk silicon. Small-signal models extracted for the inductors confirm that the degradation of the inductor characteristics in bulk silicon stems from losses in the substrate
Keywords :
MMIC; Q-factor; equivalent circuits; inductors; losses; silicon; silicon-on-insulator; substrates; thin film devices; SOS inductors; SOS substrate; Si; Si-Al2O3; bulk Si; circular spiral inductors; high quality factors; high self-resonant frequencies; low-loss dielectric substrate; microwave circuits; microwave inductors; silicon-on-sapphire; small-signal models; substrate losses; Dielectric substrates; Electrical resistance measurement; Frequency; Inductors; Metallization; Microwave circuits; Q factor; Sea measurements; Silicon; Spirals;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
