• DocumentCode
    1363209
  • Title

    1-W SiGe power HBTs for mobile communication

  • Author

    Schuppen, A. ; Gerlach, S. ; Dietrich, H. ; Wandrei, D. ; Seiler, U. ; Konig, U.

  • Author_Institution
    Daimler-Benz AG, Ulm, Germany
  • Volume
    6
  • Issue
    9
  • fYear
    1996
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    SiGe power heterojunction bipolar transistors (HBTs) with 10 and 60×2.25×15 μm2 emitter fingers, respectively, were fabricated in a completely passivated manner by a production-like process. Each emitter stripe of the big transistors includes a ballast resistance of 6 /spl Omega/. Class A load pull measurements at 1.9 GHz revealed a power-added efficiency (PAE) of 44% at 1-W RF output power for the 60-stripes transistor. In addition, a ten-finger driver HBT reached a PAE of 72% at 0.9 GHz for class A/B operation.
  • Keywords
    Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; mobile communication; power bipolar transistors; semiconductor materials; 0.9 to 1.9 GHz; 1 W; 44 to 72 percent; SiGe; SiGe power HBT; class A/B operation; heterojunction bipolar transistors; mobile communication; ten-finger driver HBT; Electrical resistance measurement; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Mobile communication; Power generation; Power measurement; Radio frequency; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.535839
  • Filename
    535839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1363209