Fluorinated $\hbox {SrTiO}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications

Charge-trapping properties of SrTiO₃ with and without fluorine incorporation are investigated by using an Al/Al₂O₃/SrTiO₃/SiO₂/Si structure. The memory device with a fluorinated SrTiO₃ film shows promising performance in terms of large memory window (8.8 V) by ±8-V sweeping voltage, large flatband-voltage (V_FB) shift (2.5 V) at a low gate voltage of +6 V for 1 ms, negligible V_FB shift after 10⁵-cycle program/erase stressing, and improved data retention compared with that with out fluorine treatment. These advantages can be associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the fluorine incorporation.