Title : 
Improved Calculation of Charge Collection Probability From Within the Junction Well
         
        
            Author : 
Ong, Vincent K.S. ; Tan, Chee Chin ; Kurniawan, Oka ; Radhakrishnan, K.
         
        
            Author_Institution : 
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
         
        
        
        
        
        
        
            Abstract : 
In this paper, the challenges to compute the charge collection probability from within an L-shaped junction well using the existing analytical expression are discussed. A solution is proposed to overcome these challenges. A good agreement has been found between the results computed using the proposed solution and those obtained from the finite-difference method and device simulator. The accuracy of the computed charge collection probability improves significantly when the proposed solution is used.
         
        
            Keywords : 
probability; semiconductor device measurement; semiconductor device models; semiconductor junctions; L-shaped junction well; analytical expression; charge collection probability; device simulator; finite-difference method; Accuracy; Computational modeling; Educational institutions; Frequency division multiplexing; Geometry; Junctions; Physics; Charge-carrier processes; semiconductor device measurement; semiconductor device modeling; simulation;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TED.2011.2169071