DocumentCode
1363449
Title
A K-band monolithic oscillator integrated with a buffer amplifier using a device-circuit interaction design concept
Author
Maruhashi, Kenichi ; Madihian, Mohammad ; Desclos, Laurent ; Ouda, K. ; Kuzuhara, Masaaki
Author_Institution
Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan
Volume
44
Issue
8
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1424
Lastpage
1428
Abstract
We report on a high power, high efficiency, and small-size monolithic coplanar waveguide oscillator incorporating a single-stage buffer amplifier on the same chip. For the oscillator design, by changing RF current level through the device, the optimum load line was chosen in order to have an oscillation frequency insensitive to the effect of the subsequently connected amplifier, based on a device-circuit interaction concept. The amplifier, on the other hand, which was driven directly by the oscillator, was designed to achieve an overall high power and high efficiency operation. At 21 GHz, the output power of the developed chip recorded 17 dBm with an overall DC-RF efficiency of 22%. By changing the length of a source feedback line, the oscillation frequency was varied from 21 GHz to 26 GHz. For all cases, the output power remained higher than 16 dBm
Keywords
MMIC amplifiers; MMIC oscillators; buffer circuits; coplanar waveguides; feedback oscillators; 21 to 26 GHz; 22 percent; K-band monolithic oscillator; SHF; buffer amplifier; coplanar waveguide; device-circuit interaction design; monolithic CPW oscillator; oscillation frequency; single-stage amplifier; source feedback line; Coplanar waveguides; Feedback; High power amplifiers; K-band; Operational amplifiers; Oscillators; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.536025
Filename
536025
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