Title :
Assessment of off-state negative gate voltage requirements for IGBTs
Author :
McNeill, Neville ; Sheng, Kuang ; Williams, Barry W. ; Finney, Stephen J.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
fDate :
5/1/1998 12:00:00 AM
Abstract :
This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors
Keywords :
driver circuits; electric impedance; insulated gate bipolar transistors; IGBT; IGBT gate drives; gate impedance; high-voltage high-current IGBT; insulated gate bipolar transistor devices; off-state gate bias voltage; off-state negative gate voltage requirements; reapplied dv/dt; temperature; Capacitance; Impedance; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Manufacturing; Semiconductor diodes; Tail; Temperature; Threshold voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
