Title :
Fast and efficient extraction of HBT model parameters using multibias S-parameter sets
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyung-Gi Do, South Korea
fDate :
8/1/1996 12:00:00 AM
Abstract :
Accurate parameter extraction technique has been presented for a small-signal equivalent circuit model of AlGaAs-GaAs HBT´s. This technique makes use of multibias data optimization regarding two sets of S-parameters in the active mode and one in the cut-off mode, under the physics-based constraint that current-dependent elements in two active bias circuits are linked to each other by the ratio of their currents. This multibias optimization as well as the constraint imposed on intrinsic parameters may reduce the degree of freedom of circuit variables and increase the probability of finding a global minimum result. As a result of this extraction, good agreement is seen between the circuit models and their measured S-parameters in the frequency range of 0.045 to 26.5 GHz
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 0.045 to 26.5 GHz; AlGaAs-GaAs; AlGaAs-GaAs HBT; HBT model parameters; active mode; cutoff mode; multibias S-parameter sets; multibias data optimization; parameter extraction technique; small-signal equivalent circuit model; Constraint optimization; Electromagnetic waveguides; Equivalent circuits; Heterojunction bipolar transistors; Impedance; Integrated circuit measurements; Planar waveguides; Scattering parameters; Slabs; Transmission line matrix methods;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on