DocumentCode
1363673
Title
Analytical and Finite-Element Modeling of a Cross Kelvin Resistor Test Structure for Low Specific Contact Resistivity
Author
Holland, Anthony S. ; Reeves, Geoffrey K. ; Bhaskaran, Madhu ; Sriram, Sharath
Author_Institution
Microelectron. & Mater. Technol. Centre, R. Melbourne Inst. of Technol. Univ., Melbourne, VIC, Australia
Volume
56
Issue
10
fYear
2009
Firstpage
2250
Lastpage
2254
Abstract
Various test structures have been employed to determine the specific contact resistivity (rhoc) of ohmic contacts, and cross Kelvin resistor (CKR) test structures are most suitable for estimating low rhoc values. The value determined by CKRs includes error due to parasitic resistances that have been difficult to account for when rhoc is low (< 10-7 Omega ldr cm2). In this paper, an analytical technique for determining the error in measurements from CKR test structures is presented. The analytical model described for circular contacts is based on Bessel function expressions. Using several contacts of different diameter (d) with d/w les 0.4 (w is the width of the CKR arms), the parasitic resistance can be accurately accounted for by extrapolation of experimental data to d/w rarr 0. Finite-element modeling and experimental results for metal-to-silicide contacts are used to validate the analytical expressions presented.
Keywords
contact resistance; finite element analysis; ohmic contacts; Bessel function expressions; cross Kelvin resistor test; finite-element modeling; low specific contact resistivity; ohmic contacts; Analytical models; Arm; Conductivity; Contact resistance; Electrical resistance measurement; Finite element methods; Kelvin; Ohmic contacts; Resistors; Testing; Contact resistance; cross Kelvin resistor (CKR); ohmic contacts; specific contact resistivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2028623
Filename
5232847
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