DocumentCode :
1363673
Title :
Analytical and Finite-Element Modeling of a Cross Kelvin Resistor Test Structure for Low Specific Contact Resistivity
Author :
Holland, Anthony S. ; Reeves, Geoffrey K. ; Bhaskaran, Madhu ; Sriram, Sharath
Author_Institution :
Microelectron. & Mater. Technol. Centre, R. Melbourne Inst. of Technol. Univ., Melbourne, VIC, Australia
Volume :
56
Issue :
10
fYear :
2009
Firstpage :
2250
Lastpage :
2254
Abstract :
Various test structures have been employed to determine the specific contact resistivity (rhoc) of ohmic contacts, and cross Kelvin resistor (CKR) test structures are most suitable for estimating low rhoc values. The value determined by CKRs includes error due to parasitic resistances that have been difficult to account for when rhoc is low (< 10-7 Omega ldr cm2). In this paper, an analytical technique for determining the error in measurements from CKR test structures is presented. The analytical model described for circular contacts is based on Bessel function expressions. Using several contacts of different diameter (d) with d/w les 0.4 (w is the width of the CKR arms), the parasitic resistance can be accurately accounted for by extrapolation of experimental data to d/w rarr 0. Finite-element modeling and experimental results for metal-to-silicide contacts are used to validate the analytical expressions presented.
Keywords :
contact resistance; finite element analysis; ohmic contacts; Bessel function expressions; cross Kelvin resistor test; finite-element modeling; low specific contact resistivity; ohmic contacts; Analytical models; Arm; Conductivity; Contact resistance; Electrical resistance measurement; Finite element methods; Kelvin; Ohmic contacts; Resistors; Testing; Contact resistance; cross Kelvin resistor (CKR); ohmic contacts; specific contact resistivity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2028623
Filename :
5232847
Link To Document :
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