Title :
Experimental comparison of load-pull measurement systems for nonlinear power transistor characterization
Author :
Deshours, Frédérique ; Bergeault, Eric ; Blache, F. ; Villotte, Jean-Pierre ; Villeforceix, B.
Author_Institution :
Dept. COM, ENST, Paris, France
fDate :
12/1/1997 12:00:00 AM
Abstract :
Load-pull measurements are essential to accurately characterize power devices. This paper presents a comparison of measurement systems based on a load-pull configuration. The experimental results performed on a power MESFET transistor (1 W) are compared in terms of output power level and power added efficiency under variable operating conditions, i.e., load impedances and input power levels
Keywords :
electric impedance measurement; microwave reflectometry; network analysers; power MESFET; power measurement; reflectometers; semiconductor device testing; 2 GHz; GaAs; heterodyne network analyser; input power levels; large signal experiment; load impedances; load-pull configuration; load-pull measurement systems; network analysers; nonlinear power transistor; optimum load impedances; output power level; power MESFET transistor; power added efficiency; power performances; six port reflectometers; variable operating conditions; Circuit simulation; Gain measurement; Impedance measurement; Load management; MESFETs; Microwave theory and techniques; Power generation; Power measurement; Power transistors; Tuners;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
