Experimental comparison of load-pull measurement systems for nonlinear power transistor characterization

Author

Deshours, Frédérique ; Bergeault, Eric ; Blache, F. ; Villotte, Jean-Pierre ; Villeforceix, B.

Author_Institution

Dept. COM, ENST, Paris, France

Volume

46

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1251

Lastpage

1255

Abstract

Load-pull measurements are essential to accurately characterize power devices. This paper presents a comparison of measurement systems based on a load-pull configuration. The experimental results performed on a power MESFET transistor (1 W) are compared in terms of output power level and power added efficiency under variable operating conditions, i.e., load impedances and input power levels

Keywords

electric impedance measurement; microwave reflectometry; network analysers; power MESFET; power measurement; reflectometers; semiconductor device testing; 2 GHz; GaAs; heterodyne network analyser; input power levels; large signal experiment; load impedances; load-pull configuration; load-pull measurement systems; network analysers; nonlinear power transistor; optimum load impedances; output power level; power MESFET transistor; power added efficiency; power performances; six port reflectometers; variable operating conditions; Circuit simulation; Gain measurement; Impedance measurement; Load management; MESFETs; Microwave theory and techniques; Power generation; Power measurement; Power transistors; Tuners;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.668266

Filename

668266