DocumentCode :
1363839
Title :
Near-Infrared Femtosecond Laser for Studying the Strain in \\hbox {Si}_{1\\hbox {-}{\\rm x}}\\hbox {Ge}_{\\rm x} Alloy Films via Second-Harmonic Generation
Author :
Zhao, Ji-Hong ; Cheng, Bu-Wen ; Chen, Qi-Dai ; Su, Wen ; Jiang, Ying ; Chen, Zhan-Guo ; Jia, Gang ; Sun, Hong-Bo
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Volume :
2
Issue :
6
fYear :
2010
Firstpage :
974
Lastpage :
980
Abstract :
The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the Oh to the C2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced χ(2) is estimated at 5.7 × 10-7 esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%.
Keywords :
Ge-Si alloys; X-ray diffraction; crystal symmetry; high-speed optical techniques; laser beam effects; light polarisation; optical films; optical harmonic generation; semiconductor thin films; SiGe; X-ray diffraction; crystal symmetry; near-infrared femtosecond laser; s-out polarized SHG intensity; second harmonic generation; Harmonic analysis; Lasers; Substrates; Ultrafast electronics; Ultrafast optics; $hbox{Si}_{1hbox{-}{ rm x}}hbox{Ge}_{rm x}$ alloy; Femtosecond laser; crystal symmetry; second-harmonic generation; strain;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2010.2089976
Filename :
5613136
Link To Document :
بازگشت