Title :
Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier
Author :
Zhang, Siyu ; Qiao, Zhongliang ; Bo, Baoxue ; Gao, Xin ; Qu, Yi ; Liu, Guojun
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
Integrated 808 nm wavelength SLDs with a ring SLD seed source and a tapered amplifier were fabricated. Output power of 400 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum is 31 nm.
Keywords :
amplifiers; integrated optics; light sources; optical fabrication; superluminescent diodes; continuous wave mode; emission spectrum; integrated superluminescent diodes; power 400 mW; ring seed source; tapered amplifier; wavelength 808 nm; Etching; Power amplifiers; Ring lasers; Semiconductor lasers; Superluminescent diodes; Ring laser; super-luminescent diodes; tapered amplifier;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2011.2173901
