DocumentCode :
1363876
Title :
Turn-Around Effect of 
Shift During the Positive Bias Temperature Instability of the n-Type Transistor With  shift of an n-type transistor with atomic-layer-deposited HfO<sub>x</sub>N<sub>y</sub> gate dielectrics under a positive gate bias. V<sub>th</sub> shifted to the positive voltage direction during the first second due to electron trapping at the preexisting trap sites in the gate dielectrics, which then shifted to the negative voltage direction. This turn-around effect was attributed to hole trapping originating from the generation of electron-hole pairs by the surface plasmon or impact ionization.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; atomic layer deposition; electron traps; hafnium compounds; hole traps; impact ionisation; surface plasmons; MOSFET; atomic-layer-deposited gate dielectrics; electron trapping; electron-hole pairs; hole trapping; impact ionization; n-type transistor; negative voltage direction; positive bias temperature instability; positive gate bias; positive voltage direction; surface plasmon; threshold voltage shift; turn-around effect; Dielectrics; Electron traps; Logic gates; MOSFET circuits; Stress; Temperature measurement; Hafnium oxynitride <formula formulatype=)
$(hbox{HfO}_{x}hbox{N}_{y})$ ; metal–oxide–semiconductor field-effect transistor (MOSFET); positive bias temperature instability (PBTI); turn-around;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2078792
Filename :
5613142
Link To Document :
