DocumentCode
1363898
Title
Porous Silicon Resonators for Improved Vapor Detection
Author
Hwang, Yongha ; Gao, Feng ; Hong, Augustin J. ; Candler, Rob N.
Author_Institution
Electr. Eng. Dept., Univ. of California at Los Angeles (UCLA), Los Angeles, CA, USA
Volume
21
Issue
1
fYear
2012
Firstpage
235
Lastpage
242
Abstract
This paper presents a microscale resonant sensor that has been fabricated with nanoscale pores for enhanced sensitivity to chemical vapors. By building resonators that are made of porous silicon, we take advantage of the increased area for molecular binding and improve the sensitivity of the resonators to the vapor concentration of interest. We present results for resonators whose surfaces are entirely porous silicon. We also examine the use of targeted regions of porosity to keep critical parts of the beam nonporous and mechanically stable while still maximizing surface area. Surface micromachining processes were used to fabricate the silicon resonator mass sensor, allowing nanostructured devices to be fabricated using only standard top-down processing techniques. We have demonstrated an improvement up to 261% and 165% in resonator sensitivity to isopropyl alcohol forfully porous resonators and partially porous resonators, respectively, as compared to nonporous silicon resonators. Combining this increased sensitivity with resonator quality factor suggests an improvement in minimum detectable resolution over the nonporous resonators by 41% and 56% for the fully porous and partially porous resonators, respectively.
Keywords
micromachining; micromechanical resonators; nanostructured materials; porosity; porous semiconductors; chemical vapor; isopropyl alcohol; microscale resonant sensor; molecular binding; nanoscale pore; nanostructured device; porous silicon resonator; resonator quality factor; silicon resonator mass sensor; surface micromachining; vapor detection; Etching; Q factor; Resonant frequency; Sensitivity; Silicon; Young´s modulus; Chemical sensing; electroless metal-assisted etching; mechanical stability; microelectromechanical systems (MEMS) resonators; porous silicon; quality factor;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2011.2170819
Filename
6062634
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