Title :
BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device
Author :
Aoulaiche, Marc ; Collaert, Nadine ; Degraeve, Robin ; Lu, Zhichao ; De Wachter, Bart ; Groeseneken, Guido ; Jurczak, Malgorzata ; Altimime, Laith
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode programming. The dominant degradation is due to the interface state generation by impact ionization used to write “1.” This degradation leads to the gate-induced drain leakage current increase, which results in shifts of the read state “0” current.
Keywords :
MOSFET; bipolar transistors; impact ionisation; leakage currents; random-access storage; 1T-RAM bulk FinFET device; BJT programming mode; BJT-mode endurance; BJT-mode programming; bipolar junction transistor programming; bulk FinFET transistor capacitorless random access memory; gate-induced drain leakage current increase; impact ionization; interface state generation; Bipolar transistors; Current measurement; Degradation; FinFETs; Interface states; Junctions; Logic gates; Bipolar junction transistor (BJT); bulk FinFET; cycling; endurance; floating-body cell (FBC); one-transistor random access memory (1T-RAM); reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2079313
