Title :
Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation
Author :
Doria, Rodrigo Trevisoli ; Cerdeira, Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Pavanello, Marcelo Antonio
Author_Institution :
Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
The harmonic distortion (HD) exhibited by unstrained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different channel lengths L and fin widths Wfin. The study has been performed through device characterization, 3-D device simulations, and modeling. Nonlinearity has been evaluated in terms of second- and third-order HDs (HD2 and HD3, respectively), and a discussion on its physical sources has been carried out. Also, the influence of the open-loop voltage gain AV in HD has been observed.
Keywords :
MOSFET; amplifiers; harmonic distortion; 3D device simulations; biaxially strained fin-shaped field-effect transistors; channel lengths; fin widths; open-loop voltage gain; second-order harmonic distortion; single-transistor amplifiers; strained FinFET; third-order harmonic distortion; unstrained FinFET; Degradation; FinFETs; Harmonic distortion; Scattering; Silicon on insulator technology; Biaxial strain; distortion; fin-shaped field-effect transistor (FinFET); silicon on insulator; single-transistor amplifier;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2079936
