DocumentCode :
1364184
Title :
Metallofullerenes in Composite Carbon Nanotubes as a Nanocomputing Memory Device
Author :
Chan, Yue ; Lee, Richard K F ; Hill, James M.
Author_Institution :
Sch. of Math. Sci., Univ. of Adelaide, Adelaide, SA, Australia
Volume :
10
Issue :
5
fYear :
2011
Firstpage :
947
Lastpage :
952
Abstract :
Here, we investigate a hybrid carbon nanostructure, which comprises two single-open host nanotubes of the same radius and joined by another single-open nanotube, which is centrally located between the host nanotubes but has a smaller radius. A metallofullerene is then enclosed inside the structure to represent a bit information and is originally located inside one of the host nanotubes. The geometric parameters, such as the radii of nanotubes and fullerene radius are purposely chosen so that the metallofullerene cannot enter the central nanotube without additional energy. By applying an external electrical field, the metallofullerene can overcome the energy barrier and pass from one end to the other end to form a two-state fullerene shuttle memory device. The key geometric parameters are provided for a range of fullerenes, including C60, C 80, and C100, noting that we assume most metallofullerenes take the form M@C60, M@C80, and M@C100, where M denotes a metal atom or ion located noncovalently inside the fullerene Cn.
Keywords :
carbon nanotubes; digital storage; fullerene devices; nanocomposites; nanoelectronics; nanotube devices; composite carbon nanotubes; metallofullerenes; nanocomputing memory device; single-open host nanotubes; two-state fullerene shuttle memory device; Carbon; Carbon nanotubes; Energy barrier; Force; Metals; Nanoscale devices; Carbon nanotube; Lennard–Jones potential; continuous approach; energy barrier and nanocomputational device; metallofullerene;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2090170
Filename :
5613187
Link To Document :
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