DocumentCode
1364184
Title
Metallofullerenes in Composite Carbon Nanotubes as a Nanocomputing Memory Device
Author
Chan, Yue ; Lee, Richard K F ; Hill, James M.
Author_Institution
Sch. of Math. Sci., Univ. of Adelaide, Adelaide, SA, Australia
Volume
10
Issue
5
fYear
2011
Firstpage
947
Lastpage
952
Abstract
Here, we investigate a hybrid carbon nanostructure, which comprises two single-open host nanotubes of the same radius and joined by another single-open nanotube, which is centrally located between the host nanotubes but has a smaller radius. A metallofullerene is then enclosed inside the structure to represent a bit information and is originally located inside one of the host nanotubes. The geometric parameters, such as the radii of nanotubes and fullerene radius are purposely chosen so that the metallofullerene cannot enter the central nanotube without additional energy. By applying an external electrical field, the metallofullerene can overcome the energy barrier and pass from one end to the other end to form a two-state fullerene shuttle memory device. The key geometric parameters are provided for a range of fullerenes, including C60, C 80, and C100, noting that we assume most metallofullerenes take the form M@C60, M@C80, and M@C100, where M denotes a metal atom or ion located noncovalently inside the fullerene Cn.
Keywords
carbon nanotubes; digital storage; fullerene devices; nanocomposites; nanoelectronics; nanotube devices; composite carbon nanotubes; metallofullerenes; nanocomputing memory device; single-open host nanotubes; two-state fullerene shuttle memory device; Carbon; Carbon nanotubes; Energy barrier; Force; Metals; Nanoscale devices; Carbon nanotube; Lennard–Jones potential; continuous approach; energy barrier and nanocomputational device; metallofullerene;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2090170
Filename
5613187
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