DocumentCode
1364214
Title
A model for radial yield degradation as a function of chip size
Author
Teets, David
Author_Institution
Intel Corp., Phoenix, AZ, USA
Volume
9
Issue
3
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
467
Lastpage
471
Abstract
Yield data was collected from a total of 928 200-mm silicon wafers which were processed using a 1 μm CMOS technology. Each wafer was patterned with one of four chips varying in area from 17 mm2 to 132 mm2. Wafers with like chips were binned together into a single grand composite wafer for each of the four chip sizes. The yield was subsequently plotted as a function of radius, and a mathematical expression was empirically fitted to the radial yield plots. The coefficients from each of the fitted expressions were then used to form a generalized expression for radial yield degradation as a function of chip size. The method of normalization, and the algorithm used to generate the radial yield plots are discussed. An explanation of the data is offered based on geometrical considerations. The radial yield dependence is then incorporated into more traditional yield models
Keywords
CMOS integrated circuits; integrated circuit modelling; integrated circuit yield; 1 micron; 200 mm; CMOS technology; chip size; geometrical considerations; grand composite wafer; normalization; radial yield degradation; CMOS process; CMOS technology; Circuit testing; Equations; Etching; Furnaces; Plasma applications; Semiconductor device modeling; Silicon; Thermal degradation;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.536118
Filename
536118
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