Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model

Author

Chan, Yi-Jen ; Huang, Chia-Hung ; Weng, Chung-Chian ; Liew, Boon-Khim

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

611

Lastpage

615

Abstract

Si MOSFET´s with submicrometer gate length were fabricated and characterized by RF evaluation. Devices with a 0.25 μm gate length demonstrated a g_m of 258 mS/mm, an f_T of 28 GHz, and a minimum noise figure of 1.8 dB at 900 MHz. A nonlinear device model was constructed based on the measured results. Empirical equations are used to represent the nonlinear elements such as g_m, C _gs, C_gd, C_ds, and R_out. These nonlinear elements, together with device parasitics, provide designers with a comprehensive model for using these devices for RF circuits

Keywords

MOSFET; S-parameters; UHF field effect transistors; elemental semiconductors; equivalent circuits; semiconductor device models; semiconductor device noise; silicon; 0.25 micron; 1.8 dB; 258 mS/mm; 28 GHz; Si; Si MOSFET; UHF; deep-submicron MOSFET; device parasitics; nonlinear RF model; Implants; Integrated circuit manufacture; Integrated circuit technology; MOSFET circuits; Microwave circuits; Microwave devices; Noise figure; Nonlinear equations; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668671

Filename

668671