Title :
Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
Author :
Chan, Yi-Jen ; Huang, Chia-Hung ; Weng, Chung-Chian ; Liew, Boon-Khim
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
5/1/1998 12:00:00 AM
Abstract :
Si MOSFET´s with submicrometer gate length were fabricated and characterized by RF evaluation. Devices with a 0.25 μm gate length demonstrated a gm of 258 mS/mm, an fT of 28 GHz, and a minimum noise figure of 1.8 dB at 900 MHz. A nonlinear device model was constructed based on the measured results. Empirical equations are used to represent the nonlinear elements such as gm, C gs, Cgd, Cds, and Rout. These nonlinear elements, together with device parasitics, provide designers with a comprehensive model for using these devices for RF circuits
Keywords :
MOSFET; S-parameters; UHF field effect transistors; elemental semiconductors; equivalent circuits; semiconductor device models; semiconductor device noise; silicon; 0.25 micron; 1.8 dB; 258 mS/mm; 28 GHz; Si; Si MOSFET; UHF; deep-submicron MOSFET; device parasitics; nonlinear RF model; Implants; Integrated circuit manufacture; Integrated circuit technology; MOSFET circuits; Microwave circuits; Microwave devices; Noise figure; Nonlinear equations; Radio frequency; Radiofrequency integrated circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
