SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility

Rectifying antennas (rectennas) are realized on high-resistivity silicon substrates using silicon monolithic millimeter-wave integrated circuit (SIMMWIC) technology. Monolithically integrated coplanar Schottky barrier diodes are used as rectifying elements embedded in different antenna structures. Both p- and n-type Schottky barrier diodes are realized with cutoff frequencies up to 1 THz. The rectennas are combined with a CMOS preamplifier mounted as a multichip module (MCM) next to the rectenna on a high-resistivity silicon substrate. An amplification of 32 dB is measured. Maximum sensitivity of the detector circuit including preamplification is 1600 mV/mW·cm^-2 at 94.6 GHz. For a monolithic integration of high-frequency circuits with low-frequency control and signal-processing electronics, the monolithic integration of CMOS circuitry on high-resistivity silicon is discussed