SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility

Author

Strohm, Karl M. ; Buechler, Josef ; Kasper, Erich

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

669

Lastpage

676

Abstract

Rectifying antennas (rectennas) are realized on high-resistivity silicon substrates using silicon monolithic millimeter-wave integrated circuit (SIMMWIC) technology. Monolithically integrated coplanar Schottky barrier diodes are used as rectifying elements embedded in different antenna structures. Both p- and n-type Schottky barrier diodes are realized with cutoff frequencies up to 1 THz. The rectennas are combined with a CMOS preamplifier mounted as a multichip module (MCM) next to the rectenna on a high-resistivity silicon substrate. An amplification of 32 dB is measured. Maximum sensitivity of the detector circuit including preamplification is 1600 mV/mW·cm^-2 at 94.6 GHz. For a monolithic integration of high-frequency circuits with low-frequency control and signal-processing electronics, the monolithic integration of CMOS circuitry on high-resistivity silicon is discussed

Keywords

CMOS analogue integrated circuits; Schottky diodes; elemental semiconductors; field effect MIMIC; millimetre wave antennas; multichip modules; silicon; 32 dB; 94.6 GHz; CMOS compatibility; CMOS preamplifier; SIMMWIC technology; Si; coplanar Schottky barrier diodes; cutoff frequencies; high-frequency circuits; low-frequency control; multichip module; rectifying antennas; sensitivity; signal-processing electronics; CMOS technology; Cutoff frequency; Integrated circuit technology; Millimeter wave integrated circuits; Monolithic integrated circuits; Preamplifiers; Rectennas; Schottky barriers; Schottky diodes; Silicon;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668681

Filename

668681