Coplanar passive elements on Si substrate for frequencies up to 110 GHz

Author

Heinrich, W. ; Gerdes, J. ; Schmückle, F.J. ; Rheinfelder, C. ; Strohm, K.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

709

Lastpage

712

Abstract

This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC´s) on high-resistivity substrates are presented. The elements include discontinuities, junctions, and spiral inductors. The models are based on field-theoretical simulations and verified by S-parameter measurements up to 110 GHz

Keywords

MIMIC; MMIC; S-parameters; coplanar waveguides; equivalent circuits; inductors; losses; silicon; substrates; 110 GHz; CPW loss; S-parameter measurements; Si; Si substrate; cell library; coplanar passive elements; coplanar waveguide loss; discontinuities; junctions; modeling; monolithic microwave integrated circuits; spiral inductors; substrate resistivity; Conductivity; Coplanar waveguides; Frequency; Inductors; Libraries; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Silicon; Spirals;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668686

Filename

668686