One-Time-Programmable Memory in LTPS TFT Technology With Metal-Induced Lateral Crystallization

A simple and reliable one-time-programmable (OTP) memory for low-temperature polysilicon thin-film-transistor technology with metal-induced lateral crystallization (MILC) is developed. The antifuse memory element is based on the breakdown of thin silicon dioxide deposited on smooth surface achieved by MILC. The effects of crystallization process and electrode configurations on the memory characteristics, including statistical variations, are studied. A read current margin of 10⁶ is achieved for the fresh and programmed memory element. Functional OTP memory array with compact layout and high disturb immunity using a split supply configuration is also demonstrated.