Title :
Measurement of thermal lensing in Cr3+-doped colquiriites
Author :
Eichenholz, Jason M. ; Richardson, Martin
Author_Institution :
Centre for Res. & Educ. in Opt. & Lasers, Central Florida Univ., Orlando, FL, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
The first direct measurements of thermally induced lensing in end-pumped Cr3+-doped LiSrAlF6, LiSrGaAlF6 , LiSrCaAlF6, and LiCaAlF6 are reported. Using a sensitive measurement technique, focal lengths as long as 40 m were measured. A thermal model has been created to determine the temperature rise as a function of position inside the laser crystal. This new model calculates the temperature distribution by considering quantum defect, upconversion, and upper state lifetime quenching as heating sources. Thermal lensing in the colquiriites is significantly reduced because of compensation of the temperature-dependent refractive index by the induced photoelastic stress inside the colquiriite crystal
Keywords :
chromium; optical pumping; optical saturable absorption; refractive index; sensitivity; solid lasers; temperature distribution; thermal blooming; Cr3+-doped LiCaAlF6; Cr3+-doped LiSrAlF6; Cr3+-doped LiSrCaAlF6; Cr3+-doped LiSrGaAlF6; Cr3+-doped colquiriites; LiCaAlF6:Cr; LiSrAlF6:Cr; LiSrCaAlF6:Cr; LiSrGaAlF6:Cr; colquiriite crystal lasers; direct measurements; end-pumped; focal lengths; heating sources; induced photoelastic stress; laser crystal; quantum defect; sensitive measurement technique; temperature distribution; temperature rise; temperature-dependent refractive index; thermal lensing; thermal model; thermally induced lensing; upconversion; upper state lifetime quenching; Chromium; Heating; Laser modes; Length measurement; Measurement techniques; Refractive index; Temperature distribution; Temperature sensors; Thermal lensing; Thermal stresses;
Journal_Title :
Quantum Electronics, IEEE Journal of
