DocumentCode :
1365190
Title :
Near-Stoichiometric Ti : LiNbO 
Strip Waveguides Fabricated by Standard Ti Diffusion and Post-VTE
Author :
Zhang, De-Long ; Hua, Ping-Rang ; Pun, Edwin Yue-Bun
Author_Institution :
Sch. of Precision Instrum. & Opto-Electron. Eng., Tianjin Univ., Tianjin, China
Volume :
21
Issue :
22
fYear :
2009
Firstpage :
1665
Lastpage :
1667
Abstract :
We report near-stoichiometric (NS) Ti : LiNbO3 waveguides fabricated by indiffusion of 4-, 5-, 6-, 7-mum-wide 120-nm-thick Ti-strips at 1060degC for 10 h into a congruent LiNbO3 (i.e., standard Ti diffusion procedure) and post-vapour-transport-equilibration (VTE) treatment at 1100degC for 5 h. These waveguides are NS and single-mode at 1.5 mum, and have a loss of 1.0/0.8 dB/cm for the TM/TE mode. In the width/depth direction of the waveguide, the mode field follows a Gauss/Hermite-Gauss profile, and the Ti profile follows a sum of two error functions/a Gauss function. The post-VTE resulted in increase of diffusion width/depth by 2.0/1.0 mum. A two-dimensional refractive index profile in the guiding layer is suggested.
Keywords :
annealing; diffusion; integrated optics; lithium compounds; optical fabrication; optical losses; optical waveguides; refractive index; stoichiometry; titanium; 2D dimensional refractive index; Gauss function; Gauss profile; Hermite-Gauss profile; LiNbO3:Ti; annealing; error functions; near stoichiometric strip waveguide; post vapour transport equilibration; single-mode waveguides; size 120 nm; size 4 mum; size 5 mum; size 6 mum; size 7 mum; standard Ti diffusion; temperature 1060 C; temperature 1100 C; time 10 h; time 5 h; titanium profile; waveguide loss; wavelength 1.5 mum; Near-stoichiometric (NS) Ti : LiNbO$_{3}$
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2031246
Filename :
5233796
Link To Document :
