Title :
Thermal Stability of Poly-Si Phototransistors Incorporating Ge Quantum Dots for Near-Ultraviolet Light Detection and Amplification
Author :
Chen, I.H. ; Tseng, S.S. ; Li, Pei-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
We investigated temperature-dependent ( 300 K - 120 K ) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the poly-Si PT structure improves the device thermal stability in the subthreshold characteristics and transient photoresponse, due to better light absorption efficiency and photovoltaic effect suppression.
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; photoconductivity; photodetectors; phototransistors; semiconductor materials; semiconductor quantum dots; thermal stability; ultraviolet detectors; Si-Ge; gate oxide; germanium quantum dots; light absorption efficiency; near-ultraviolet light amplification; near-ultraviolet light detection; photoconductivity; photovoltaic effect suppression; poly-Si phototransistors; quantum confinement effect; subthreshold characteristics; temperature 300 K to 120 K; thermal stability; transient photoresponse; Germanium (Ge); phototransistors (PTs); quantum dots (QDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2031499
