DocumentCode :
1365383
Title :
Integration of AlInGaAs-MQW Fabry–Pérot Lasers With Emission at Two Wavelength Ranges via Quantum-Well Intermixing
Author :
Lee, Ko-Hsin ; Roycroft, Brendan ; O´Callaghan, James ; Daunt, Chris L L M ; Yang, Hua ; Song, Jeong Hwan ; Peters, Frank H. ; Corbett, Brian
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
Volume :
23
Issue :
1
fYear :
2011
Firstpage :
27
Lastpage :
29
Abstract :
We demonstrate ridge waveguide lasers based on AlInGaAs multiple quantum wells emitting at 1434 and 1541 nm on the same laser bar using quantum-well intermixing with dielectric capping layers. The internal quantum efficiencies are measured to be 61% and 72% and the internal losses are 49 and 23 cm-1 for lasers with intermixing promoted and inhibited, respectively. The characteristic temperatures are found to be approximately 50 K for lasers emitting around 1433 nm and 75 K for those emitting around 1541 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical losses; quantum well lasers; waveguide lasers; AlInGaAs; Fabry-Perot lasers; characteristic temperatures; dielectric capping layers; efficiency 61 percent; efficiency 72 percent; internal losses; internal quantum efficiencies; quantum-well intermixing; ridge waveguide lasers; wavelength 1434 nm; wavelength 1541 nm; Measurement by laser beam; Photonic band gap; Photonics; Quantum well lasers; Temperature measurement; Waveguide lasers; Bandgap shift; integration; interdiffusion; quantum-well intermixing (QWI); semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2090344
Filename :
5613917
Link To Document :
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