DocumentCode
136552
Title
A High Power Density Inverter with hybrid sic module
Author
Wei Su ; Jun Liu ; Xuhui Wen ; Wei Sun ; Xiang Tai
Author_Institution
Inst. of Electr. Eng., Beijing, China
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
4
Abstract
Compared with the silicon power devices, silicon carbide(sic) power devices are expected to have a great impact on inverter efficiency, weight, volume and reliability. In order to research on the sic power devices, A hybrid module with si IGBT and sic schottky diodes was built. In this paper, characters of si diodes and sic diodes were shown. Than switch characters of the all si module and hybrid sic module were compared in double pulse platform. Finally, inverter loss of all SI inverter and hybrid sic inverter was tested, in the permanent magnet synchronous motor.
Keywords
Schottky diodes; insulated gate bipolar transistors; invertors; permanent magnet motors; reliability; silicon compounds; synchronous motors; wide band gap semiconductors; SiC; double pulse platform; high power density silicon carbide inverter loss; hybrid silicon carbide power device module; permanent magnet synchronous motor; silicon IGBT; silicon carbide schottky diode; Discrete wavelet transforms; Insulated gate bipolar transistors; Inverters; Silicon carbide; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6940823
Filename
6940823
Link To Document