• DocumentCode
    136552
  • Title

    A High Power Density Inverter with hybrid sic module

  • Author

    Wei Su ; Jun Liu ; Xuhui Wen ; Wei Sun ; Xiang Tai

  • Author_Institution
    Inst. of Electr. Eng., Beijing, China
  • fYear
    2014
  • fDate
    Aug. 31 2014-Sept. 3 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Compared with the silicon power devices, silicon carbide(sic) power devices are expected to have a great impact on inverter efficiency, weight, volume and reliability. In order to research on the sic power devices, A hybrid module with si IGBT and sic schottky diodes was built. In this paper, characters of si diodes and sic diodes were shown. Than switch characters of the all si module and hybrid sic module were compared in double pulse platform. Finally, inverter loss of all SI inverter and hybrid sic inverter was tested, in the permanent magnet synchronous motor.
  • Keywords
    Schottky diodes; insulated gate bipolar transistors; invertors; permanent magnet motors; reliability; silicon compounds; synchronous motors; wide band gap semiconductors; SiC; double pulse platform; high power density silicon carbide inverter loss; hybrid silicon carbide power device module; permanent magnet synchronous motor; silicon IGBT; silicon carbide schottky diode; Discrete wavelet transforms; Insulated gate bipolar transistors; Inverters; Silicon carbide; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-4240-4
  • Type

    conf

  • DOI
    10.1109/ITEC-AP.2014.6940823
  • Filename
    6940823