Title :
Challenges and trends of high power IGBT module packaging
Author :
Wang, Yannan ; Wu, Yaowu ; Jones, Simon ; Dai, Xiaoyu ; Liu, Guo-Ping
Author_Institution :
Dynex Semicond. Ltd., Lincoln, UK
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
Insulated gate bipolar transistor (IGBT) modules play an important role in many power systems, in which the performance and reliability are limiting factors to system application. Therefore, intensive investigation has been done on the packaging as it affects IGBT module characteristics. In this paper, the status, challenges and trends of packaging technologies for high power traction and industrial drive IGBT modules are discussed. It is suggested that the advanced joining and interconnection technologies for the future power module assembly will improve the module performance and reliability significantly.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device packaging; semiconductor device reliability; high power IGBT module packaging; industrial drive IGBT modules; insulated gate bipolar transistor; power module assembly; Bonding; Copper; Insulated gate bipolar transistors; Packaging; Reliability; Substrates; Wires;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6940851