Title :
Laser diodes are power-packed: Single-mode laser diodes have a rosy future, both as individual sources of power up to 100 milliwatts and in arrays promising up to half a watt
Author_Institution :
Lytel Inc., Somerville, NJ, USA
fDate :
6/1/1985 12:00:00 AM
Abstract :
The ultimate power limits of current diode-laser structures are considered, along with the prospects of new applications. After explaining how the physical geometry of a diode laser determines its performance, the author discusses the three methods that can relax the output-power limits imposed by the gradual or catastrophic degradation of the diode´s mirror facets. Attention is given to ways of obtaining high powers at long wavelengths from InGaAsP lasers and the most powerful AlGaAs and InGaAsP devices now available are described. The use of arrays in overcoming present power limits is explained. Applications of high-power lasers in optical-disk recording, fiber-optic distribution networks, laser printers and space communications (satellite-to-satellite) are discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beam applications; power supplies to apparatus; semiconductor junction lasers; AlGaAs lasers; III-V semiconductors; InGaAsP lasers; degradation; fiber-optic distribution networks; laser diodes; laser printers; optical-disk recording; output-power; power supplies to apparatus; semiconductor junction lasers; space communications; Diode lasers; Laser beams; Laser modes; Optical waveguides; Semiconductor diodes; Semiconductor lasers;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1985.6370493