• DocumentCode
    1365878
  • Title

    Powerless XOR gate based on ambipolar CNT transistors

  • Author

    Sharifi, M.J. ; Ghasemi, Saleh

  • Author_Institution
    Electr. & Comput. Fac., Shahid Beheshti Univ., Tehran, Iran
  • Volume
    46
  • Issue
    22
  • fYear
    2010
  • Firstpage
    1494
  • Lastpage
    1495
  • Abstract
    Undoped SBCNTFETs have a unique characteristic in that they can automatically adjust themselves as p-type or n-type transistors based on the applied biases. Introduced is a new XOR gate based on the abovementioned feature for the first time and its correct function is shown using a new method and also by means of HSPICE simulation.
  • Keywords
    SPICE; carbon nanotubes; logic gates; transistors; HSPICE simulation; ambipolar CNT transistor; n-type transistor; p-type transistor; powerless XOR gate; undoped SBCNTFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1901
  • Filename
    5614010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1365878