• DocumentCode
    1365939
  • Title

    A model for GRIN-SCH-SQW diode lasers

  • Author

    Chinn, Stephen R. ; Zory, Peter S. ; Reisinger, Axel R.

  • Author_Institution
    General Electric Co., Syracuse, NY, USA
  • Volume
    24
  • Issue
    11
  • fYear
    1988
  • fDate
    11/1/1988 12:00:00 AM
  • Firstpage
    2191
  • Lastpage
    2214
  • Abstract
    A comprehensive model for graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) AlxGa1-xAs diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain-vs.-current density data for different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, and the high-gain kink in T0 versus temperature is qualitatively explained
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser theory; semiconductor junction lasers; AlxGa1-xAs diode lasers; III-V semiconductors; current density; gain; graded-index; separate-confinement-heterostructure; single-quantum-well; Carrier confinement; Charge carrier density; Current density; Diode lasers; Laser modes; Laser theory; Optical design; Optical waveguides; Temperature dependence; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.8562
  • Filename
    8562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1365939